An article Why does the presence of silicon atoms improve the emission properties of biphenyl derivatives? – Verification of various hypotheses by experiment and theory WOS:000487555400063 published article about ELECTRONIC RELAXATION PROCESSES; ORGANOSILICON COMPOUNDS; MOLECULAR-CONFORMATION; FLUORESCENCE; ABSORPTION; ROTATION; SPECTRA in [Rachuta, Karolina; Bayda-Smykaj, Malgorzata; Koput, Jacek; Majchrzak, Mariusz; Marciniak, Bronislaw] Adam Mickiewicz Univ, Fac Chem, Uniwersytetu Poznanskiego 8, PL-61614 Poznan, Poland; [Bayda-Smykaj, Malgorzata; Marciniak, Bronislaw] Adam Mickiewicz Univ, Ctr Adv Technol, Uniwersytetu Poznanskiego 10, PL-61614 Poznan, Poland; [Hug, Gordon L.] Univ Notre Dame, Radiat Lab, Notre Dame, IN 46556 USA in 2019, Cited 35. The Name is 4,4′-Dibromobiphenyl. Through research, I have a further understanding and discovery of 92-86-4. Name: 4,4′-Dibromobiphenyl
In the course of studying silicon modifications to improve emission properties of commonly used organic compounds, biphenyl with dimethylsilylvinyl groups in the para position (3-Si) was investigated. A comparative study was performed on the exact C-analogue (3-C) and expanded to biphenyl and dimethylbiphenyl to emphasize the general trend observed. Compound 3-Si displayed emission properties clearly different than all of the investigated hydrocarbon compounds, i.e. twice stronger fluorescence (phi(f) = 0.6) and a 3-times larger radiative rate constant as compared to 3-C in acetonitrile. Searching for the source of the unique emission of 3-Si, singlet and triplet processes were investigated for all of the compounds using steady-state and time-resolved methods, and their principal photophysical parameters are reported. Experimental work was supported by the theoretical predictions obtained using the EOM-CCSD method. The results led to the conclusion that the strong emission of 3-Si must be due to silicon’s presence that enhanced intensity borrowing from the strongly allowed S0 -> S2 transition and the larger S1 -> S0 transition moment.
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